1 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 1-888-468-3774 | copyright intersil americas inc. 2002, 2008, 2012. all rights reserved intersil (and design) is a trademark owned by intersil corporation or one of its subsidiaries. star*power? is a trademark of intersil americas inc. all other trademarks mentioned are the property of their respective owners . single event radiation hardened quad voltage comparators is-139asrh, is-139aseh the single event effects and total dose radiation hardened is-139asrh, is-139aseh consist of four independent single or dual supply voltage comparators on a single monolithic substrate. the common mode input voltage range includes ground, even when operated from a single supply, and the low supply current makes these comparators suitable for low power applications. these types were designed to directly interface with ttl and cmos inputs. the is-139asrh, is-139aseh are fabricated on our dielectrically isolated rad hard silicon gate (rsg) process, which provides immunity to single event latch-up and the capability of highly reliable performance in any radiation environment. specifications for rad hard qml devices are controlled by the defense logistics agency land and maritime (dla). the smd numbers listed below must be used when ordering. detailed electrical specific ations for the is-139asrh, is-139aseh are contained in smd 5962-01510 . pin configuration IS9-139ASRH, is9-139aseh (flatpack cdfp4-f20) top view features ? electrically screened to smd # 5962-01510 ? qml qualified per mil-prf-38535 requirements ?radiation hardness - total dose . . . . . . . . . . . . . . . . . . . . . . . . . 300krad(si) (max) - single event latch-up . . . . . . . . . . . . . . . >84mev/mg/cm 2 - single event upset . . . . . . . . . . . . . . . . . . >84mev/mg/cm 2 ? operating supply voltage range . . . . . . . . . . . . . . . 9v to 30v ? input offset voltage (v io ) . . . . . . . . . . . . . . . . . . . . 5mv (max) ? quiescent supply current . . . . . . . . . . . . . . . . . . . . 3ma (max) ? differential input voltage range equal to the supply voltage applications ? dc-dc power conversion ?pulse generators ? timing circuitry ? level shifting ?analog to digital conversion tm 2 3 4 5 6 7 8 120 19 18 17 16 15 14 13 nc outb nc outa nc nc vcc -ina 9 10 12 11 +ina -inb outc outd nc gnd nc +ind -ind +inc -inc +inb ordering information ordering number internal mkt. number temp. range (c) package drawing number 5962f0151001vxc IS9-139ASRH-q -55 to +125 k20.a 5962f0151001qxc IS9-139ASRH-8 -55 to +125 k20.a 5962f0151002vxc is9-139aseh-q -55 to +125 k20.a IS9-139ASRH/proto IS9-139ASRH/proto -55 to +125 k20.a april 6, 2012 fn9000.4
is-139asrh, is-139aseh 2 intersil products are manufactured, assembled and tested utilizing iso9000 quality systems as noted in the quality certifications found at www.intersil.com/design/quality intersil products are sold by description only. intersil corporat ion reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is believed to be accurate and reliable. however, no responsi bility is assumed by intersil or its subsid iaries for its use; nor for any infringem ents of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of i ntersil or its subsidiaries. for information regarding intersil corporation and its products, see www.intersil.com fn9000.4 april 6, 2012 for additional products, see www.intersil.com/product_tree die characteristics die dimensions 3750m x 4510m (148 mils x 178 mils) 483m 25.4m (19 mils 1 mil) interface materials glassivation type: silox (sio 2 ) thickness: 8.0k? 1.0k? top metallization type: alsicu thickness: 16.0k? 2k? substrate radiation hardened silicon gate, dielectric isolation backside finish silicon assembly related information substrate potential unbiased (di) additional information worst case current density <2.0 x 10 5 a/cm 2 transistor count 644 metallization mask layout is-139asrh, is-139aseh outa outb vcc -ina +ina -inb +inb -inc +inc -ind +ind gnd outd outc
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